BDX33 bdx34 BDX33a bdx34a BDX33b bdx34b BDX33c bdx34c vck?un s 45 v (min) - BDX33.bux34 ? 60 v (min) - BDX33a.bdx34a ? 80 v (min) - BDX33b.bdx34b = 100 v(mln) - BDX33c.box34c * monolithic construction wtth built-in base-emitter shunt resistor maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base vottage collector current - continuous peak base current total power dissipation ctc=25c derate above 25c operating and storage junction temperature range symbol vceo vclo vebo 'c 'cm ib pd l.tsto BDX33 BDX33a bdx34 bdx34a 45 60 45 60 BDX33b BDX33c bdx34b box34c 80 100 80 100 5.0 10 15 0.25 70 0.56 -65 to +150 unit v v v a a w w/c c thermal characteristics characteristic symbol max thermal resistance junction to case r e jc 1 .78 unit c/w figure -1 power derating 100 1 m b & tf\ jn .., -vl ... - fij -** $ 2 n? 0 \ "x \ "v^ \^ "v^ "0 25 50 75 100 125 150 te , tempbwture(?c) 10 ampere darlington complementary silicon power transistors 45-100 volts 70 watts to-220 b i r n^-- 1 123 ? jf pin 1 ?i ; 4 dim a b c d e f g h 1 j k l m o . , "i .base .collectof -bwiter .collectof j hr "i i -ik t ?&* i -) f ? l 8e) millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2,20 0.33 2.48 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.96 1.38 2.97 0.55 298 3.90 nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conducton is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. qualify semi-conductors
BDX33,a,b,c npn / bdx34,a,b,c pnp electrical characteristics (tc = 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector-emitter sustaining vohagefl) BDX33, bdx34 ( lc= 1 00 ma, ib" 0 ) BDX33a, bdx34a BDX33b, bdx34b BDX33c, bdx34c collector cutoff current ( v,," 22 v, 1.- 0 ) BDX33, bdx34 ( vm= 30 v, l= 0 ) BDX33a, bdx34a ( vel= 40 v, l,= 0 ) BDX33b, bdx34b ( v^ 50 v, l= 0 ) BDX33c, bdx34c collector-base cutoff current (vcb= rated vcb, 1^0) emitter-base cutoff current (vb=5.0v, lc=0) vcecxiu*) iceo icbo iebo 45 60 80 100 0.5 0.5 0.5 0.5 200 10 v ma ua ma on characteristics (1) dc current gain ( lc= 4.0 a. vce= 3.0 v ) BDX33/33a/34/34a ( lc= 3.0 a, vce= 3.0 v ) BDX33b/33c/34b/34c collector-emitter saturation voltage ( i. =4.0 a. ib = 8.0 ma ) BDX33/33a/34/34a ( lc- 3.0 a, ib = 6.0 ma ) BDX33b/33c/34b/34c base-emitter on voltage ( lc- 4.0 a, vce- 3.0 v ) BDX33/33a/34/34a ( l= 3.0 a, vce= 3.0 v ) BDX33b/33c/34b/34c hfe v?,?? vm 750 750 2.5 2.5 2.5 2.5 v v (1) pulse test pulse width =300 us, duty cycle 2.0% 5.0 2.0 1.0 o.s 0.2 0.1 - 0.06 0.02 fig-2 safe operating area bonding win un* second bmkdown ljn dc bdxmc/34c there are two limitation on the power handling ability of a transistor iwrage junction temperature and second breakdown safe operating area curves indicate iq-vct limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curve* indicate. the data of fig-2 is base ontj(pw=150 c;tc avertable depending on conditions, second breakdown pulse limits are valid for duty cycles to 10% provided tjfpkj<150c ,at high case temperatures, thermal imitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ib 20 6.0 10 20 so 100 zoo vcf , collector emitter voltage (volts)
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